Product Summary

The BSM150GT120DN2 is a IGBT Power Module.

Parametrics

Absolute maximum ratings: (1)Collector-emitter voltage: 1200 V; (2)Collector-gate voltage: 1200 V at RGE = 20 kW; (3)Gate-emitter voltage VGE: ± 20 V; (4)DC collector current: 200 A at TC = 25 ℃, 150 A at TC = 80 ℃; (5)Pulsed collector current, tp = 1 ms: 400 A at TC = 25 ℃, 300 A at TC = 80 ℃; (6)Power dissipation per IGBT: 1250 W at TC = 25 ℃; (7)Chip temperature: + 150 ℃; (8)Storage temperature: -55 to + 150 ℃.

Features

Features: (1)Solderable Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM150GT120DN2
BSM150GT120DN2
Infineon Technologies
IGBT Modules 1200V 150A TRIPACK
Data Sheet
0-1: $155.20
1-10: $139.67
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM100GAL120DLCK
BSM100GAL120DLCK
Infineon Technologies
IGBT Modules 1200V 100A CHOPPER
Data Sheet
0-1: $44.53
1-10: $40.07
BSM100GAL120DN2
BSM100GAL120DN2
Infineon Technologies
IGBT Modules 1200V 100A CHOPPER
Data Sheet
Negotiable 
BSM100GAR120DN2
BSM100GAR120DN2
Infineon Technologies
IGBT Transistors 1200V 100A DUAL
Data Sheet
Negotiable 
BSM100GB120DLC
BSM100GB120DLC
Infineon Technologies
IGBT Modules 1200V 100A DUAL
Data Sheet
0-6: $78.93
6-10: $71.03
BSM100GB120DLCK
BSM100GB120DLCK
Infineon Technologies
IGBT Modules 1200V 100A DUAL
Data Sheet
0-1: $49.93
1-5: $47.43
5-10: $44.93
10-50: $43.44
BSM100GB120DN2
BSM100GB120DN2
Infineon Technologies
IGBT Modules 1200V 100A DUAL
Data Sheet
0-1: $82.74
1-10: $74.47