(China (Mainland))
Product Summary
The IS61LV25616AL-10TL is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI high-performance CMOS technology. This highly reliable process of the IS61LV25616AL-10TL coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) of the IS61LV25616AL-10TL controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.
Parametrics
IS61LV25616AL-10TL absolute maximum ratings: (1)VTERM Terminal Voltage with Respect to GND: –0.5 to VDD+0.5 V; (2)TSTG Storage Temperature: –65 to +150 ℃; (3)PT Power Dissipation: 1.0 W.
Features
IS61LV25616AL-10TL features: (1)High-speed access time: 10, 12 ns; (2)CMOS low power operation; (3)Low stand-by power; (4)Less than 5 mA (typ.) CMOS stand-by; (5)TTL compatible interface levels; (6)Single 3.3V power supply; (7)Fully static operation: no clock or refresh required; (8)Three state outputs; (9)Data control for upper and lower bytes; (10)Industrial temperature available.
Diagrams
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RTC6701 |
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RTC6711 |
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RTC6721 |
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